ETCHANT AND ETCHING METHOD FOR COPPER-MOLYBDENUM FILM LAYER
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United States of America Patent
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Nov 3, 2022
app pub date -
Dec 29, 2020
filing date -
Dec 29, 2020
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Abstract
The present invention discloses an etchant and an etching method for a copper-molybdenum film layer. The etchant includes a main etchant, and the main etchant includes hydrogen peroxide, a chelating agent, a first inorganic acid, and water. A mass percentage of the chelating agent in the main etchant is in a range of 2% to 10%, a mass percentage of the first inorganic acid in the main etchant is in a range of 1% to 10%, and a mass percentage of the hydrogen peroxide in the main etchant is in a range of 4% to 10%.
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