SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
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United States of America Patent
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Issued Date -
Nov 10, 2022
app pub date -
May 3, 2022
filing date -
May 7, 2021
priority date (Note) -
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Abstract
In one exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus comprises: a chamber; a substrate support disposed in the chamber; a gas supply disposed in the chamber and connected to a supply source of reaction gas containing HF gas and CxHyFz gas (where x and z are integers equal to or greater than 1 and y is an integer equal to or greater than 0); and a plasma-generator configured to form a plasma from the reaction gas supplied to the chamber from the gas supply, wherein at least a portion of the chamber exposed to the plasma is made of a conductive silicon-containing material.
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