CONTROLLING A QUANTUM POINT JUNCTION ON THE SURFACE OF AN ANTIFERROMAGNETIC TOPOLOGICAL INSULATOR

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United States of America Patent

APP PUB NO 20220367090A1
SERIAL NO

17690627

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Abstract

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Various embodiments include an electrical device comprising an antiferromagnetic topological insulator having a surface comprising a bulk domain wall configured to support a first type of 1D chiral channel, a surface step configured to support a second 1D chiral channel and intersecting the bulk domain wall to form thereat a quantum point junction.

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Patent Owner(s)

Patent OwnerAddress
RUTGERS THE STATE UNIVERSITY OF NEW JERSEYNEW BRUNSWICK NJ 08901

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Pixley, Jedediah Highland Park, US 1 1
Vanderbilt, David Princeton, US 2 23
Varnava, Nicodemos Highland Park, US 1 1
Wilson, Justin Highland Park, US 25 69

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