INITIATED CHEMICAL VAPOR DEPOSITION AND STRUCTURATION OF POLYOXYMETHYLENE

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United States of America Patent

APP PUB NO 20220372201A1
SERIAL NO

17759082

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Abstract

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This invention relates to a method for synthesizing polyoxymethylene on a substrate. The method includes depositing monomer capable of forming polyoxymethylene by an initiated polymerization reaction and an initiator, via initiated chemical vapor deposition (iCVD) onto a surface of a substrate in an initiated chemical vapor deposition reactor.

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Patent Owner(s)

Patent OwnerAddress
DREXEL UNIVERSITYPHILADELPHIA PA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHEN, Zhengtao Hangzhou, CN 3 0
LAU, Kenneth KS Haddonfield, US 3 16

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