CAPACITOR STRUCTURE AND MANUFACTURING METHOD AND OPERATING METHOD THEREOF

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United States of America Patent

APP PUB NO 20230008075A1
SERIAL NO

17370593

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Abstract

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A capacitor structure, a method for manufacturing a capacitor structure and a method for operating a capacitor structure are provided. The capacitor structure includes a first electrode and a second electrode; a dielectric layer between the first electrode and the second electrode; and an oxygen donor layer between the dielectric layer and the first electrode. An oxygen concentration of the oxygen donor layer increases along a thickness direction from a first surface proximal to the dielectric layer to a second surface proximal to the first electrode.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHIANG, KATHERINE H NEW TAIPEI CITY, TW 143 70
LAI, HSIN-YU HSINCHU, TW 10 7

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