YTTRIUM INGOT AND SPUTTERING TARGET IN WHICH THE YTTRIUM INGOT IS USED

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United States of America Patent

APP PUB NO 20230212734A1
SERIAL NO

17996718

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Abstract

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Provided is an yttrium ingot from which an yttrium sputtering target that produces a reduced number of particles can be obtained, and an yttrium sputtering target that has high plasma resistance and a low resistance that enables realization of a high film deposition rate can be obtained.

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Patent Owner(s)

Patent OwnerAddress
TOSOH CORPORATION4560 KAISEI-CHO SHUNAN-SHI YAMAGUCHI 7468501 ?7468501

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HARA, Hiroyuki Ayase-shi, JP 163 1426
MATSUNAGA, Osamu Ayase-shi, JP 42 605
MESUDA, Masami Ayase-shi, JP 25 19
TSUCHIDA, Yuya Ayase-shi, JP 5 1

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