METHOD FOR MANUFACTURING COMPOSITE SUBSTRATE PROVIDED WITH PIEZOELECTRIC SINGLE CRYSTAL FILM

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United States of America Patent

APP PUB NO 20230216463A1
SERIAL NO

17998171

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Abstract

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Provided is a method of manufacturing a composite substrate equipped with a piezoelectric single-crystal film having good film-thickness uniformity and not causing deterioration in properties even if ion implantation is performed. The method of manufacturing a composite substrate 10 equipped with a piezoelectric single-crystal film 11 according to the present invention includes the steps of: (a) subjecting a piezoelectric single-crystal substrate 1 made of lithium tantalate or lithium niobate to ion implantation treatment to form an ion implantation layer 11, (c) bonding the surface of the piezoelectric single-crystal substrate 1 having the ion implantation layer 11 thereon to a temporary bonding substrate 2, (d) separating the piezoelectric single-crystal substrate 1 into the ion implantation layer 11 and the remaining portion of the substrate to form a piezoelectric single-crystal film 11 on the temporary bonding substrate 2, (f) bonding a supporting substrate 3 to the surface of the piezoelectric single-crystal film 11 opposite to a bonded surface of the temporary bonding substrate, and (g) separating the temporary bonding substrate from the piezoelectric single-crystal film 11.

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Patent Owner(s)

Patent OwnerAddress
SHIN-ETSU CHEMICAL CO LTD4-1 MARUNOUCHI 1-CHOME CHIYODA-KU TOKYO 1000005 ?1000005

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
NAGATA, Kazutoshi Annaka-shi, Gunma, JP 19 36

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