THIN-FILM STRUCTURE AND SEMICONDUCTOR DEVICE COMPRISING THE SAME

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United States of America Patent

APP PUB NO 20230282389A1
SERIAL NO

17897519

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Abstract

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A thin-film structure and a semiconductor device including the same are provided. The thin-film structure includes: a base layer; and a dielectric layer on the base layer, the dielectric layer including crystals including a <11x> (0≤x≤1) crystal orientation in an out-of-plane direction of the base layer and having an orthorhombic crystal structure of an oIV phase (space group: Pmn21).

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KIM, Junghwa Yongin-si, KR 25 84
KUH, Bongjin Suwon-si, KR 17 24
LEE, Eunha Seoul, KR 17 18
LEE, Hyangsook Suwon-si, KR 33 87
LEE, Sangjun Seoul, KR 51 199
NAM, Gabjin Seoul, KR 5 42

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