BANDGAP REFERENCE CIRCUIT USING HETEROGENEOUS POWER AND ELECTRONIC DEVICE HAVING THE SAME

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United States of America Patent

APP PUB NO 20230295908A1
SERIAL NO

18322355

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Abstract

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Disclosed is a bandgap reference circuit, which includes a first current generator that generates a first current proportional to a temperature, a second current generator that outputs a second current obtained by mirroring the first current to a first node at which a reference voltage is formed, a first resistor that is connected with the first node and is supplied with the second current, and a first bipolar junction transistor (BJT) that includes an emitter node connected with the first resistor, a base node supplied with a first power, and a collector node supplied with a second power different from the first power.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDSUWON-SI

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
JUNG, Yunhwan Hwaseong-si, KR 26 34
KANG, Sunyood Suwon-si, KR 1 0
KIM, Kyung-Min Seoul, KR 109 694
KIM, Yungong Hwaseong-si, KR 1 0
LEE, Hyeongji Chuncheon-si, KR 10 2
SUH, Seongnam-si Seongnam-si, KR 1 0
SUL, Haesick Suwon-si, KR 12 10

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