WAFER MANUFACTURING METHOD
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United States of America Patent
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Issued Date -
Oct 12, 2023
app pub date -
Apr 7, 2023
filing date -
Apr 11, 2022
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Abstract
A wafer manufacturing method includes a peeling start point forming step of applying, to an ingot, a laser beam of such a wavelength as to be transmitted through the ingot, with a focal point of the laser beam positioned at a depth corresponding to the thickness of a wafer to be manufactured, from an end face of the ingot, to form a peeling start point, and a peeling step of peeling off, from the peeling start point, the wafer to be manufactured from the ingot. In the peeling step, degassed water is supplied to the end face of the ingot to generate a degassed water layer, and an ultrasonic wave is applied to break the peeling start point.
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