ETCH PROCESS FOR OXIDE OF ALKALINE EARTH METAL

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United States of America Patent

APP PUB NO 20230374670A1
SERIAL NO

17746406

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Abstract

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A method of processing a substrate that includes: loading the substrate in a plasma processing chamber, the substrate having a surface including an oxide, the oxide including an alkaline earth metal; flowing a process gas including CCl4 into the plasma processing chamber; in the plasma processing chamber, forming a fluorine-free plasma from the process gas by applying a source power to a source electrode of the plasma processing chamber; and exposing the substrate to the fluorine-free plasma to etch the oxide of the surface.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITEDTOKYO 107-6325

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Vallee, Christophe Albany, US 31 201
Wang, Mingmei Albany, US 31 127
Zhang, Du Albany, US 20 7

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