Importance

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Abstract

Disclosed is a transparent conductive oxide thin film. The metal oxide is a transparent conductive material of (In₂O₃)_x(MO)_y(ReO)_z formed by doping a small amount of a rare earth oxide ReO into an indium-containing metal oxide MO—In₂O₃ as a photon-generated carrier conversion center. According to the present application, in an indium-based metal oxide, a rare earth oxide material is introduced, such that the carrier concentration is controlled, and the mobility is improved; rare earth ions in the rare earth oxide have the lower electronegativity, and an ionic bond Ln-O formed by the rare earth ions and oxygen ions has the higher bond breaking energy, such that the oxygen vacancy concentration in the In₂O₃ thin film may be effectively controlled. The rare earth ions have the ionic radius equivalent to that of indium ions, defect scattering caused by structure mismatch may be reduced, the high mobility characteristics thereof may be kept better.

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First Claim