Etching Solution For Titanium Nitride And Molybdenum Conductive Metal Lines
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United States of America Patent
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Issued Date -
Jan 11, 2024
app pub date -
Mar 2, 2021
filing date -
Mar 4, 2020
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Abstract
Etching composition suitable for etching titanium nitride and molybdenum from a microelectronic device, which includes, consists essentially of, or consists of, in effective amounts: water; HNO3; optionally, at least one chloride ion source selected from the group of NH4Cl and HCl; a base selected from the group of an alkanolamine, NH4OH, a quaternary ammonium hydroxide, and mixtures thereof; optionally, at least one fluoride ion source; optionally, at least one heteroaromatic compound; and optionally, at least one water-miscible solvent selected from the group of diethylene glycol butyl ether, sulfolane, and propylene carbonate.
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