Method to Manufacture Ruthenium Rotary Sputtering Target

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United States of America Patent

APP PUB NO 20240043987A1
SERIAL NO

17902204

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Abstract

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The invention discloses a method for preparing a ruthenium rotary sputtering target, including the following steps: S100: manually press molding: putting ruthenium powder into a mold, and manually pressurizing the ruthenium powder to form the ruthenium powder into a relative density is a first preformed target with a first preset density; S200: vacuum hot pressing, placing the first stage target together with the mold into a vacuum hot press for processing to obtain a second preformed target with a relative density of the second preset density The preformed target material, and the second preset density is bigger than the first preset density; S300: hot isostatic pressing, the second preformed target material is put into the hot isostatic pressing for processing, and the relative density of the third preformed target is obtained. Assuming the density of the forming target, the third preset density is bigger than the second preset density, and the third preset density is exceeded 99.5%. The preparation method of the ruthenium rotary sputtering target disclosed in this invention can effectively solve the problem of volume shrinkage in the target forming process, so that the shape of the target is better controllable, which improving the stability of the target during the sputtering process and the film quality.

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Patent Owner(s)

Patent OwnerAddress
SINGAPORE ADVANCED THIN FILM MATERIAL PRIVATE LIMITED1 TUAS SOUTH STREET 3 SINGAPORE 638043

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bai, Xiangyu Singapore, SG 1 0
Phang, Kok Tong Singapore, SG 1 0
Wu, Yusheng Singapore, SG 71 593
Xia, Yanbin Singapore, SG 1 0
Zhang, Ruoyu Singapore, SG 10 23
Zheng, Shuangming Singapore, SG 3 0

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