REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY, MASK BLANK FOR EUV LITHOGRAPHY, AND MANUFACTURING METHODS THEREOF

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United States of America Patent

APP PUB NO 20240045319A1
SERIAL NO

18380956

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Abstract

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A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.

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AGC INCTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
AKAGI, Daijiro Tokyo, JP 24 20
Ishikawa, Ichiro Tokyo, JP 15 38
Kawahara, Hirotomo Tokyo, JP 23 78
Sakaki, Kenichi Tokyo, JP 1 1
Uno, Toshiyuki Tokyo, JP 32 319

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