MASK BLANK, METHOD FOR MANUFACTURING TRANSFER MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Feb 15, 2024
app pub date -
Jan 18, 2022
filing date -
Jan 26, 2021
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Abstract
A mask blank has a substrate and a pattern-forming thin film formed on the substrate. The pattern-forming thin film is one of a single-layer film containing chromium and nitrogen or a multi-layer film comprising at least one chromium nitride-based layer. An arithmetic mean roughness Sa is 1.0 nm or less and a ratio of a maximum height Sz to the arithmetic mean roughness Sa Sz/Sa is 14 or less in a 1-μm square positioned in a central region on a surface of the pattern-forming thin film with respect to a center of the substrate.
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