SEMICONDUCTOR DEVICE STRUCTURE

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United States of America Patent

APP PUB NO 20240153540A1
SERIAL NO

18408510

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Abstract

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A semiconductor device structure includes a silicon substrate, a transistor, and an interconnection. The silicon substrate has a silicon surface. The transistor includes a gate structure, a first conductive region, a second conductive region, and a channel under the silicon surface. The interconnection is extended beyond the transistor and coupled to the first conductive region of the transistor. The interconnection is disposed under the silicon surface and isolated from the silicon substrate by an isolation region.

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Patent Owner(s)

Patent OwnerAddress
ETRON TECHNOLOGY INCNO 6 TECHNOLOGY ROAD 5 HSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lu, Chao-Chun Taipei City, TW 86 197

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