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Abstract

Methods and apparatus for processing a substrate are provided herein. For example, a matching network comprises a first sensor operably connected to an input of the matching network and an RF generator operable at a first frequency and a second sensor operably connected to an output of the matching network and the plasma processing chamber. The first sensor and the second sensor are configured to measure impedance during an RF generator pulse on time. A variable capacitor is connected to the first sensor and the second sensor, and a controller is configured to tune the at least one variable capacitor of the matching network during the RF generator pulse on time based on impedance values measured during at least one of pulse on states or pulse off states of a pulse voltage waveform generator connected to the matching network or an RF signal of another RF generator operable at a second frequency different from the first frequency.

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First Claim