STRUCTURE WITH PHOTODIODE, HIGH ELECTRON MOBILITY TRANSISTOR, SURFACE ACOUSTIC WAVE DEVICE AND FABRICATING METHOD OF THE SAME
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United States of America Patent
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Issued Date -
May 16, 2024
app pub date -
Dec 7, 2022
filing date -
Nov 10, 2022
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Abstract
A structure with a photodiode, an HEMT and an SAW device includes a photodiode and an HEMT. The photodiode includes a first electrode and a second electrode. The first electrode contacts a P-type III-V semiconductor layer. The second electrode contacts an N-type III-V semiconductor layer. The HEMT includes a P-type gate disposed on an active layer. A gate electrode is disposed on the P-type gate. Two source/drain electrodes are respectively disposed at two sides of the P-type gate. Schottky contact is between the first electrode and the P-type III-V semiconductor layer, and between the gate electrode and the P-type gate. Ohmic contact is between the second electrode and the first N-type III-V semiconductor layer, and between one of the two source/drain electrodes and the active layer and between the other one of two source/drain electrodes and the active layer.
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