BULK ACOUSTIC WAVE RESONATOR AND FABRICATION METHOD THEREOF

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United States of America Patent

APP PUB NO 20240162875A1
SERIAL NO

18542915

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Abstract

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A method for fabricating a bulk acoustic wave (BAW) resonator includes forming a top electrode layer, a piezoelectric layer, and a bottom electrode layer above a bottom substrate, forming a first pad metal layer that contacts the top electrode, forming a second pad metal layer that contacts the bottom electrode, forming a bond contacting layer that partially covers each one of the first pad metal layer and the second pad metal layer, forming a top bonding layer on a cap wafer, and bonding the cap wafer onto the piezoelectric layer via the bond contacting layer and the bonding layer.

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Patent Owner(s)

Patent OwnerAddress
SHENZHEN NEWSONIC TECHNOLOGIES CO LTDROOM 801 BUILDING 3 136 ZHONGKANG ROAD SHANG MEILIN FUTIAN DISTRICT SHENZHEN GUANGDONG 518049 518049

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Inventor Name Address # of filed Patents Total Citations
HU, Weiwei Shenzhen, CN 21 65

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