Importance

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Abstract

Disclosed is a method of manufacturing a semiconductor device. The method includes forming a patterned hardmask over an underlying target layer on a substrate; and performing plasma fabrication operations in parallel on the patterned hardmask and underlying target layer in a plasma etching chamber using a plasma etch gas and a selective source gas. The plasma operations include forming a protective cap on the patterned hardmask; and removing portions of the underlying layer that are not covered by the patterned hardmask. In various embodiments, the selective source gas includes a chemical compound that includes a halogen gas that can be dissociated into a metal and a halogen, and the plasma operations include dissociating the metal and the halogen in the selective source gas and forming a protective cap on the patterned hardmask using the metal that has been dissociated.

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First Claim