MASK BLANK, PHASE SHIFT MASK, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Jun 6, 2024
app pub date -
Jan 21, 2022
filing date -
Mar 23, 2021
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Abstract
A mask blank comprises a transparent substrate and a phase shift film on the transparent substrate. The phase shift film includes a lower layer and an upper layer formed on the lower layer. The upper layer is in contact with the lower layer. The lower layer includes silicon and oxygen. The upper layer includes hafnium and oxygen. The upper layer has a thickness of 5 nm or more. The phase shift film has a thickness of 90 nm or less.
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