NITRIDE INSULATOR MATERIAL, METHOD FOR PRODUCING SAME, HEAT FLOW SWITCHING ELEMENT, AND THERMOELECTRIC CONVERSION ELEMENT
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jun 6, 2024
app pub date -
Feb 21, 2022
filing date -
Feb 26, 2021
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
Provided are a nitride insulator material having low lattice thermal conductivity, a method for producing the same, a heat flow switching element, and a thermoelectric conversion element. The nitride insulator material of the present invention consists of a metal nitride represented by the general formula: M-Si—N—Te (where M represents at least one of Ta and Hf, and Te is an arbitrary element) and has a nanocrystalline structure. In addition, the heat flow switching element of the present invention includes: an N-type semiconductor layer 3; an insulator layer 4 laminated on the N-type semiconductor layer; and a P-type semiconductor layer 5 laminated on the insulator layer, wherein the insulator layer is made of the above-described nitride insulator material.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully