ETCHING METHOD AND PROCESSING DEVICE
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United States of America Patent
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Issued Date -
Jun 13, 2024
app pub date -
Apr 4, 2022
filing date -
Apr 15, 2021
priority date (Note) -
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Abstract
Provided is a method for etching a metal on a substrate, the etching method including (a) a step for exposing the metal to a halogen-containing gas and modifying a surface layer of the metal to be a halide-containing surface layer, (b) a step for exposing the halide-containing surface layer to a gas that contains carbon (C) and oxygen (O) and removing the halide-containing surface layer, and (c) a step for repeating the (a) step and the (b) step in the stated order.
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