REFLECTIVE MASK FOR EXTREME ULTRAVIOLET LITHOGRAPHY AND A METHOD OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME
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United States of America Patent
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Jul 4, 2024
app pub date -
Oct 25, 2023
filing date -
Jan 4, 2023
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Abstract
An extreme ultraviolet (EUV) reflective mask including: a mask substrate, a reflection layer on the mask substrate, and an absorption layer on the reflection layer, wherein the absorption layer includes a main pattern and non-diffraction patterns the main pattern, the non-diffraction patterns form a honeycomb shape, a pitch between the non-diffraction patterns is less than a diffraction limit, and the main pattern is isolated from the non-diffraction patterns.
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