PREPARATION METHOD OF CONTACT MATERIAL WITH HIGH THERMAL STABILITY AND LOW CONTACT RESISTANCE BASED ON MGAGSB-BASED THERMOELECTRIC MATERIAL
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United States of America Patent
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Jul 18, 2024
app pub date -
Dec 8, 2023
filing date -
Dec 8, 2023
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Abstract
The present disclosure provides a preparation method of a contact material with high thermal stability and low contact resistance based on an MgAgSb-based thermoelectric material and relates to the field of the contact materials preparation. The present disclosure aims to solve the problem of failure to achieve long-term stability for the MgAgSb/Mg3Bi2 device due to the fact that a contact material used by MgAgSb is Ag and MgAgSb may easily yield Ag3Sb in an Ag-rich environment at present. The method includes: at step 1, preparing MgCuSb nano-powder; at step 2, preparing MgCu0.1Ag0.87Sb0.99 nano-powder; at step 3, preparing MgCu0.1Ag0.87Sb0.99—Mg3.2Bi1.5Sb0.5 thermoelectric generation device. The present disclosure is applied to preparation of a contact material with high thermal stability and low contact resistance based on an MgAgSb-based thermoelectric material.
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