POLISHING COMPOSITION, POLISHING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Aug 1, 2024
app pub date -
Jan 24, 2024
filing date -
Jan 27, 2023
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
The present invention provides a method capable of increasing a ratio (selection ratio) of a polishing removal rate of silicon oxide or silicon nitride to a polishing removal rate of polysilicon and further reducing residues (preferably organic residues) on a surface of a polished object to be polished. The present invention is a polishing composition containing colloidal silica, an inorganic salt containing no halogen, and a water-soluble polymer, in which a product of a valence number (unit: valency) of an anion of the inorganic salt and a concentration (unit: mM) of the anion in the polishing composition is 57 or more.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully