CHAMBER WALL POLYMER PROTECTION SYSTEM AND METHOD

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20240271286A1
SERIAL NO

18647384

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

In an etch process chamber, oscillators are positioned a predetermined distance away from an outer wall and coupled to a microwave generator. An inner wall of the process chamber on which particulates such as polymers adhere from the etch process is vibrated via operations of the oscillators. A gas flows into the cavity defined by the inner wall to collect the displaced particulates, which is then pumped out of the cavity to clean the process chamber. A controller identifies the polymer recipe used during the etch process and selects an oscillation program from memory. A microwave generator, controlled by the controller, is directed to generate microwaves at preselected frequencies determined from the program. The microwave frequencies are communicated to the oscillators, which then vibrate the inner wall at such received frequencies.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MFG CO LTDNO 8 LI-HSIN RD 6 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
LIU, YAN-HONG Zhudong Township, TW 34 90
TSENG, PO-HSUN New Taipei City, TW 7 3

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation