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Abstract

The innovative method is for removing a silicon carbide layer from a bulk piece; the bulk piece comprises a graphite substrate underlying the silicon carbide layer; the method comprises in succession the steps of: a) submerging the bulk piece in a first solution containing nitric acid, b) submerging the bulk piece in a second solution containing hydrofluoric acid and an oxidizing agent, and typically c) submerging the bulk piece in a third solution containing preferably only or essentially deionized water until the layer detaches from the piece; this method can advantageously be used to clean components of an epitaxial reactor e.g. after their use in the reactor in silicon carbide deposition processes.

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First Claim