READ DISTURB MITIGATION BASED ON SIGNAL AND NOISE CHARACTERISTICS OF MEMORY CELLS COLLECTED FOR READ CALIBRATION

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United States of America Patent

APP PUB NO 20240296896A1
SERIAL NO

18657672

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Abstract

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A memory device to perform a read disturb mitigation operation. For example, the memory device can measure signal and noise characteristics of a group of memory cells to determine an optimized read voltage of the group of memory cells and determine a margin of read disturb accumulated in the group of memory cells. Subsequently, the memory device can identify the group of memory cells for the read disturb mitigation operation based on the margin of read disturb and a predetermined threshold.

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Patent Owner(s)

Patent OwnerAddress
MICRON TECHNOLOGY INC8000 S FEDERAL WAY BOISE ID 83707-0006

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Alhussien, AbdelHakim S San Jose, US 75 962
Fitzpatrick, James Laguna Niguel, US 153 2146
Khayat, Patrick Robert San Diego, US 57 340
Parthasarathy, Sivagnanam Carlsbad, US 258 1182

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