CHEMICAL MECHANICAL POLISHING SLURRY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
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United States of America Patent
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Sep 26, 2024
app pub date -
Mar 13, 2024
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Mar 24, 2023
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Abstract
Provided is a chemical mechanical polishing slurry used for chemical mechanical polishing of a metal layer. The chemical mechanical polishing slurry may include deionized water, abrasive particles, and an aqueous solution including a temperature-sensitive oxidizing agent configured to control both the static etch rate and removal rate of the metal layer in a chemical mechanical polishing process when the polishing temperature of the chemical mechanical polishing process is 10° C. to 75° C.
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