CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

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United States of America Patent

APP PUB NO 20240318040A1
SERIAL NO

18609533

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Provided is a chemical mechanical polishing (CMP) slurry composition including an organic booster including an amino acid, a pH adjuster, and inorganic abrasive particles of less than 0.1 weight % with respect to a total weight of the CMP slurry composition, wherein a material constituting a remaining part of the CMP slurry composition is deionized water (DIW).

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Byun, Yearin Suwon-si, KR 9 0
Kim, Boyun Suwon-si, KR 12 9
Lim, Jeongwon Suwon-si, KR 1 0
Park, Sanghyun Suwon-si, KR 82 222
Park, Seungho Suwon-si, KR 60 157

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