PHASE SHIFT BLANKMASK AND PHOTOMASK FOR EUV LITHOGRAPHY
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Oct 3, 2024
app pub date -
Aug 25, 2023
filing date -
Apr 3, 2023
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
Disclosed is a blankmask for EUV lithography. The blankmask has a reflective film formed on a substrate, a capping film containing ruthenium (Ru), an etch stop film containing tantalum (Ta) and antimony (Sb), and a phase shift film containing ruthenium (Ru). The etch stop film has a composition ratio of tantalum (Ta) and antimony (Sb) ranging from 3:7 to 7:3. The stacked structure of the phase shift film containing ruthenium (Ru) and the etch stop film containing tantalum (Ta) and antimony (Sb) results in achieving a high extinction coefficient (k) and a low refractive index (n).
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully