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Abstract

The techniques described herein relate to an optoelectronic semiconductor light emitting device including a single crystal (Al_xGa_1-x)₂O₃ substrate including a monoclinic or corundum crystal symmetry, where 0xGa_1-x)₂O₃ substrate. The optical emission region can be configured to emit light having a wavelength in a range from 150 nm to 425 nm. The techniques described herein also relate to a semiconductor structure including a single crystal (Al_xGa_1-x)₂O₃ substrate including a monoclinic or corundum crystal symmetry, where 0xGa_1-x)₂O₃ substrate. The epitaxial oxide layer can include a polar form of (Al_yGa_1-y)₂O₃ with a hexagonal crystal symmetry, where 0≤y≤1.

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First Claim