Importance

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Abstract

A semiconductor device includes a substrate, a first FET (Field Effect Transistor) configured to include a first source electrode electrically connected to a first reference potential, a first gate electrode electrically connected to an input terminal, and a first drain electrode, a second FET configured to include a second source electrode, a second gate electrode, and a second drain electrode electrically connected to an output terminal, the second FET being arranged in a first direction with respect to the first FET, a first wiring configured to electrically connect the first drain electrode to the second source electrode, and s capacitor configured to be provided between the first FET and the second FET, and have a first end electrically connected to the second gate electrode and a second end electrically connected to a second reference potential.

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First Claim