BLANK MASK AND PHOTOMASK USING THE SAME

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United States of America Patent

APP PUB NO 20240345468A1
SERIAL NO

18750609

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Abstract

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A blank mask including a transparent substrate, a phase shift film disposed on the transparent substrate, and a light shielding film disposed on the phase shift film. The phase shift film has XRD maximum peak at 20 of 15° to 30° when normal mode XRD analysis is performed on an upper surface of the phase shift film. The transparent substrate has XRD maximum peak at 20 of 15° to 30° when performing normal mode XRD analysis on a lower surface of the transparent substrate. AI1 value of the blank mask expressed by below Equation is 0.9 to 1.1.

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Patent Owner(s)

Patent OwnerAddress
SK ENPULSE CO LTDPYEONGTAEK-SI GYEONGGI-DO 17784

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHOI, Suk Young Suwon-si, KR 25 52
JEONG, Min Gyo Suwon-si, KR 24 0
KIM, Kyuhun Suwon-si, KR 17 2
KIM, Seong Yoon Suwon-si, KR 30 28
KIM, Suhyeon Suwon-si, KR 42 397
LEE, Hyung-joo Suwon-si, KR 41 577
RYU, JiYeon Suwon-si, KR 10 1
SHIN, INKYUN Suwon-si, KR 30 6
SON, SUNG HOON Suwon-si, KR 29 107

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