EPITAXIAL STRUCTURE AND METHOD OF FORMING THE SAME
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United States of America Patent
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Issued Date -
Oct 17, 2024
app pub date -
Apr 12, 2023
filing date -
Apr 12, 2023
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Abstract
An epitaxial structure includes a substrate and a dielectric layer. The dielectric layer is on the substrate. The substrate comprises a single crystal metal or a single crystal 2D material. The dielectric layer is in physical contact with the substrate. The dielectric layer comprises a non-perovskite structure with defined grain orientation with ferroelectric (FE) phase or antiferroelectric (AFE) phase.
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