MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
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United States of America
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Nov 7, 2024
app pub date -
Jul 12, 2024
filing date -
Jul 12, 2024
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Abstract
A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.
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