MEMS Device and Fabrication Process with Reduced Z-Axis Stiction
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United States of America
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Nov 14, 2024
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May 9, 2023
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May 9, 2023
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Abstract
A method and apparatus are described for fabricating a high aspect ratio MEMS sensor device having an inertial transducer element formed in a multi-layer semiconductor structure, where the first inertial transducer element comprises a first monocrystalline semiconductor proof mass element and a second conductive electrode element separated from one another by an air sensing gap, and where at least a first sensing gap surface of the first monocrystalline semiconductor proof mass element is a first rough surface that has been selectively etched to reduce stiction between the first monocrystalline semiconductor proof mass element and the second conductive electrode element.
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