PHOTORESIST FOR SEMICONDUCTOR FABRICATION
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United States of America
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Issued Date -
Nov 21, 2024
app pub date -
Jun 28, 2024
filing date -
Jun 28, 2024
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Abstract
An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.
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