MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20240389472A1
SERIAL NO

18786688

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Abstract

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A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5 d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3 d orbitals.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MFG CO LTDNO 8 LI-HSIN RD 6 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Kuan-Hao Caotun Township, TW 5 30
Chiu, Yu-Fang Taipei City, TW 4 10
Hu, Chen-Yu New Taipei City, TW 2 1
Huang, Chao-Chung Neipu Township, TW 7 7
Huang, Yen-Lin Hsinchu, TW 35 345
Lee, Chien-Min Hsinchu, TW 210 1319
Lin, Shy-Jay Jhudong Township, TW 142 982
Pai, Chi-Feng New Taipei City, TW 10 454
Peng, Cheng-Wei New Taipei City, TW 3 1
Song, MingYuan Hsinchu, TW 44 102
Tsai, Chia-Chin Kaohsiung, TW 7 18

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