Importance

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Abstract

An increase in the voltage of an organic semiconductor device including a step of forming an aluminum oxide film over and in contact with an organic semiconductor layer is inhibited. A layer containing an organometallic compound for a mask for an organic semiconductor layer, which is represented by General Formula (G1) below, is provided between the organic semiconductor layer and the aluminum oxide film. In General Formula (G1), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, X represents oxygen or sulfur, M represents a metal, n represents an integer greater than or equal to 1 and less than or equal to 5, and n is the same as the valence of the metal M. Note that when n is greater than or equal to 2, a plurality of Ars may be the same or different and Xs may be the same or different. When Ar represents the substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, a heteroatom of the heteroaryl group may be coordinated to the metal M.

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First Claim