CHEMICAL MECHANICAL POLISH SLURRY AND METHOD OF MANUFACTURE

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United States of America

APP PUB NO 20240395562A1
SERIAL NO

18790908

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Abstract

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Methods of manufacturing a chemical-mechanical polishing (CMP) slurry and methods of performing CMP process on a substrate comprising metal features are described herein. The CMP slurry may be manufactured using a balanced concentration ratio of chelator additives to inhibitor additives, the ratio being determined based on an electro potential (Ev) value of a metal material of the substrate. The CMP process may be performed on the substrate based on the balanced concentration ratio of chelator additives to inhibitor additives of the CMP slurry.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MFG CO LTDNO 8 LI-HSIN RD 6 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Chih-Chieh Zhubei City, TW 63 329
Chen, Kei-Wei Tainan City, TW 247 1209
Chen, Tung-Kai New Taipei City, TW 10 4
Huang, Hui-Chi Zhubei City, TW 54 103
Kung, Chun-Hao Hsinchu, TW 21 23
Liao, Kao-Feng Hsinchu, TW 19 406

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