BONDING STRUCTURE AND METHOD OF FORMING SAME

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United States of America

APP PUB NO 20240395752A1
SERIAL NO

18791012

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Abstract

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A device includes an interconnect structure over a substrate, multiple first conductive pads over and connected to the interconnect structure, a planarization stop layer extending over the sidewalls and top surfaces of the first conductive pads of the multiple first conductive pads, a surface dielectric layer extending over the planarization stop layer, and multiple first bonding pads within the surface dielectric layer and connected to the multiple first conductive pads.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MFG CO LTDNO 8 LI-HSIN RD 6 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Hsien-Wei Hsinchu, TW 976 9710
Chen, Jie New Taipei City, TW 1059 5911
Chen, Ming-Fa Taichung City, TW 524 4489

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