SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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United States of America
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Nov 28, 2024
app pub date -
Jun 4, 2024
filing date -
Jun 4, 2024
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Abstract
A semiconductor device includes first channel layers disposed over a substrate, a first source/drain region disposed over the substrate, a gate dielectric layer disposed on and wrapping each of the first channel layers, a gate electrode layer disposed on the gate dielectric layer and wrapping each of the first channel layers, and a liner semiconductor layer disposed between the first channel layers and the first source/drain region.
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