FERROELECTRIC MFM INDUCTOR AND RELATED CIRCUITS

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20240395933A1
SERIAL NO

18789402

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Abstract

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Techniques in accordance with embodiments described herein are directed to a MFM structure that includes a resistance component, an inductance component and a capacitance component. The MFM device is equivalent to a series LC circuit with the resistance component coupled in parallel with the capacitance component. The MFM structure is used as a series LC resonant circuit, band-pass circuit, band-stop circuit, low-pass filter, high-pass filter, oscillators, or negative capacitors.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MFG CO LTDNO 8 LI-HSIN RD 6 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHEN, Miin-Jang Hsinchu, TW 66 230
CHENG, Po-Hsien Hsinchu, TW 28 21
YIN, Yu-tung Hsinchu, TW 7 11

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