HETEROSTRUCTURE AND METHOD OF FABRICATION
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United States of America
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Issued Date -
Nov 28, 2024
app pub date -
Jul 31, 2024
filing date -
Jul 31, 2024
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Abstract
The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.
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