METHOD FOR SELECTIVE METALLISATION OF INORGANIC DIELECTRICS OR SEMICONDUCTORS

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20240407107A1
SERIAL NO

18340111

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This invention describes a process for selectively depositing metal on the surfaces of inorganic dielectric materials such as glass, ceramics, or semiconductor materials. The method enables the rapid and precise formation of electric circuits on both flat and three-dimensional surfaces. The production method includes steps: firstly, treatment of an item surface with an ultrashort pulse laser of the areas for metallisation, seconds step pre-treatment with the R—OH solution followed by metal salt catalyst activation in a bath and finally electroless metal plating. During immersion in the metal salt catalyst activation bath, localized R—OH molecules on the item's surface act as reducing agents, facilitating the reduction of metal ions from the activation bath. This results in the formation of catalytic seeds exclusively at the laser-modified areas. The metal layers exhibit high adhesion to the dielectric surface due to the formation of chemical bonds.

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Patent OwnerAddress
VALSTYBINIS MOKSLINIU TYRIMU INSTITUTAS FIZINIU IR TECHNOLOGIJOS MOKSLU CENTRAS02300 VILNIUS

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
JAGMINIENE, Aldona Vilnius, LT 13 80
NORKUS, Eugenijus Vilnius, LT 16 89
RACIUKAITIS, Gediminas Vilnius, LT 5 1
RATAUTAS, Karolis Vilnius, LT 3 0
STANKEVICIENE, Ina Vilnius, LT 11 25

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