TUNGSTEN SINTERED SPUTTERING TARGET

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20240408671A1
SERIAL NO

18809628

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Abstract

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Provided is a tungsten sintered sputtering target, wherein the phosphorus content is 1 wtppm or less and the remainder is other unavoidable impurities and tungsten. The inclusion of phosphorus heavily affects the abnormal grain growth of tungsten and the deterioration in the target strength. In particular, if phosphorus is contained in an amount exceeding 1 ppm, crystal grains subject to abnormal grain growth will exist in the tungsten target. Thus, the object is to prevent the abnormal grain growth of tungsten and improve the product yield of the target by strongly recognizing the phosphorus contained in the tungsten as a harmful impurity and controlling the inclusion thereof to be as low as possible.

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Patent Owner(s)

Patent OwnerAddress
JX ADVANCED METALS CORPORATIONTOKYO 105-8417

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
ODA, Kunihiro Ibaraki, JP 32 319
Suzuki, Ryo Ibaraki, JP 310 1888

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