Importance

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Abstract

Proposed are a substrate processing method and a substrate processing apparatus. A substrate processing method according to an embodiment is for etching a thin film formed on a substrate at the atomic layer level, and includes a surface modification step of modifying a surface of the thin film by supplying a first gas including chlorine (Cl) to a processing space of a chamber in which the substrate is placed, a first purge step of removing the first gas remaining in the processing space by supplying a purge gas to the processing space, an etching step of etching the modified thin film by supplying a second gas including acetylacetone (Hacac) to the processing space, and a second purge step of removing the second gas remaining in the processing space by supplying the purge gas to the processing space.

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First Claim